document number: 83606 for technical questions, contact: optocoupleranswe rs@vishay.com www.vishay.com rev. 1.7, 04-nov-10 1 optocoupler, phototransistor output, with base connection cny17 vishay semiconductors description the cny17 is an optically coupled pair consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon npn phototransitor. signal information, including a dc level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. the cny17 can be used to replace relays and transformers in many digital interface a pplications, as well as analog applications such as crt modulation. features ? isolation test voltage: 5300 v rms ? long term stability ? industry standard dual-in-line package ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec agency approvals ? underwriters lab file no. e52744 system code h or j ? din en 60747-5-2 (vde 0884) ? bsi iec 60950, iec 60065 ?fimko note (1) also available in tubes, do not put t on the end. i179004-7 1 2 3 6 5 4 b c e a c nc v de 21842-1 ordering information cny 1 7 - # x 0 # # t part number ctr bin package option tape and reel agency certified/package ctr (%) ul, bsi, fimko 40 to 80 63 to 125 100 to 200 160 to 320 dip-6 cny17-1 cny17-2 cny17-3 cny17-4 dip-6, 400 mil, option 6 cny17-1x006 cny17-2x006 cny17-3x006 cny17-4x006 smd-6, option 7 cny17-1x007t (1) CNY17-2X007t (1) cny17-3x007t (1) cny17-4x007t (1) smd-6, option 9 cny17-1x009t (1) cny17-2x009t (1) cny17-3x009t (1) cny17-4x009t (1) vde, ul, bsi, fimko 40 to 80 63 to 125 100 to 200 160 to 320 dip-6 cny17-1x001 cny17-2x001 cny17-3x001 cny17-4x001 dip-6, 400 mil, option 6 cny17-1x016 cny17-2x016 cny17-3x016 cny17-4x016 smd-64, option 7 cny17-1x017 cny17-2x017t (1) cny17-3x017t (1) cny17-4x017t (1) smd-6, option 9 - cny17-2x019t (1) -- absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit input reverse voltage v r 6v forward current i f 60 ma surge current t 10 s i fsm 2.5 a power di ssipation p diss 100 mw > 0.1 mm 10.16 mm > 0.7 mm 7.62 mm dip option 7 option 6 option 9
www.vishay.com for technical questions, contact: optocoupleranswe rs@vishay.com document number: 83606 2 rev. 1.7, 04-nov-10 cny17 vishay semiconductors optocoupler, phototransistor output, with base connection note ? stresses in excess of the absolute maximum ratings can cause pe rmanent damage to the device. functional operation of the devic e is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to abs olute maximum ratings for e xtended periods of the time ca n adversely affect reliability. note ? minimum and maximum values were tested requierements. typical va lues are characteristics of the device and are the result of e ngineering evaluations. typical values are for information only and are not part of the testing requirements. output collector emitter breakdown voltage bv ceo 70 v emitter base brea kdown voltage bv ebo 7v collector current i c 50 ma t < 1 ms i c 100 ma power dissipation p diss 150 mw coupler isolation test voltage between emitter and detector t = 1 s v iso 5300 v rms creepage distance 7mm clearance distance 7mm isolation thickness between emitter and detector 0.4 mm comparative tracking index per din iec 112/vd e 0303, part 1 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c soldering temperature max. 10 s, dip soldering: distance to seating plane 1.5 mm t sld 260 c absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit electrical characteristcs (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit input forward voltage i f = 60 ma v f 1.25 1.65 v breakdown voltage i r = 10 ma v br 6v reverse current v r = 6 v i r 0.01 10 a capacitance v r = 0 v, f = 1 mhz c o 25 pf thermal resistance r th 750 k/w output collector emitte r capacitance v ce = 5 v, f = 1 mhz c ce 5.2 pf collector base capacitance v cb = 5 v, f = 1 mhz c cb 6.5 pf emitter base capacitance v eb = 5 v, f = 1 mhz c eb 7.5 pf thermal resistance r th 500 k/w coupler collector emitter, saturation voltage v f = 10 ma, i c = 2.5 ma v cesat 0.25 0.4 v coupling capacitance c c 0.6 pf collector emitter, leakage current v ce = 10 v cny17-1 i ceo 250na cny17-2 i ceo 250na cny17-3 i ceo 5 100 na cny17-4 i ceo 5 100 na
document number: 83606 for technical questions, contact: optocoupleranswe rs@vishay.com www.vishay.com rev. 1.7, 04-nov-10 3 cny17 optocoupler, photot ransistor output, with base connection vishay semiconductors note ? current transfer ratio and collector-emitter leakage current by dash number (t amb c). current transfer ratio parameter test condition part symbol min. typ. max. unit i c /i f v ce = 5 v, i f = 10 ma cny17-1 ctr 40 80 % cny17-2 ctr 63 125 % cny17-3 ctr 100 200 % cny17-4 ctr 160 320 % v ce = 5 v, i f = 1 ma cny17-1 ctr 13 30 % cny17-2 ctr 22 45 % cny17-3 ctr 34 70 % cny17-4 ctr 56 90 % switching characteristics parameter test condition part symbol min. typ. max. unit linear operation (without saturation) turn-on time i f = 10 ma, v cc = 5 v, r l = 75 t on 3s rise time i f = 10 ma, v cc = 5 v, r l = 75 t r 2s turn-off time i f = 10 ma, v cc = 5 v, r l = 75 t off 2.3 s fall time i f = 10 ma, v cc = 5 v, r l = 75 t f 2s cut-off frequency i f = 10 ma, v cc = 5 v, r l = 75 f co 250 khz switching operation (with saturation) turn-on time i f = 20 ma cny17-1 t on 3s i f = 10 ma cny17-2 t on 4.2 s cny17-3 t on 4.2 s i f = 5 ma cny17-4 t on 6s rise time i f = 20 ma cny17-1 t r 2s i f = 10 ma cny17-2 t r 3s cny17-3 t r 3s i f = 5 ma cny17-4 t r 4.6 s turn-off time i f = 20 ma cny17-1 t off 18 s i f = 10 ma cny17-2 t off 23 s cny17-3 t off 23 s i f = 5 ma cny17-4 t off 25 s fall time i f = 20 ma cny17-1 t f 11 s i f = 10 ma cny17-2 t f 14 s cny17-3 t f 14 s i f = 5 ma cny17-4 t f 15 s
www.vishay.com for technical questions, contact: optocoupleranswe rs@vishay.com document number: 83606 4 rev. 1.7, 04-nov-10 cny17 vishay semiconductors optocoupler, phototransistor output, with base connection typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - linear operation (without saturation) fig. 2 - switching operation (with saturation) fig. 3 - current transfer ratio vs. diode current fig. 4 - current transfer ratio vs. diode current fig. 5 - current transfer ratio vs. diode current fig. 6 - current transfer ratio vs. diode current icny17_01 r l = 75 v cc = 5 v i c 47 i f i f 1 k v cc = 5 v 47 icny17_02 (%) 1000 1 2 3 4 100 10 1 0.1 10 1 i f (ma) icny17_03 (t a = - 25 c, v ce = 5 v) i c /i f = f (i f ) i c i f 1 2 3 4 icny17_04 (%) 1000 100 10 1 0.1 10 1 i f (ma) (t a = 0 c, v ce = 5 v) i c /i f = f (i f ) i c i f 1 2 3 4 icny17_05 (%) 1000 100 10 1 0.1 10 1 i f (ma) (t a = 25 c, v ce = 5 v) i c /i f = f (i f ) i c i f 1 2 3 4 icny17_06 (%) 1000 100 10 1 0.1 10 1 i f (ma) (t a = 50 c, v ce = 5 v) i c /i f = f (i f ) i c i f
document number: 83606 for technical questions, contact: optocoupleranswe rs@vishay.com www.vishay.com rev. 1.7, 04-nov-10 5 cny17 optocoupler, photot ransistor output, with base connection vishay semiconductors fig. 7 - current transfer ratio vs. diode current fig. 8 - current transfer ratio (ctr) vs. temperature fig. 9 - transistor characteristics fig. 10 - output characteristics fig. 11 - forward voltage fig. 12 - collector emitter off-state current 1 2 3 4 icny17_07 (%) 1000 100 10 1 0.1 10 1 i f (ma) (t a = 75 c, v ce = 5 v) i c /i f = f (i f ) i c i f - 25 75 25 050 t a (c) icny17_08 1 2 3 4 (%) 1000 100 10 (i f = 10 ma, v ce = 5 v) i c /i f = f (t) i c i f 30 25 10 20 15 0 015 10 5 5 i c (ma) v ce (v) icny17_09 i b = 10 a i b = 15 a i b = 20 a i b = 40 a i b = 2 a i b = 5 a i c = f (v ce ) i f = 0 40 30 10 20 0 015 10 5 i c v ce (v) icny17_10 i f = 14 ma i f = 12 ma i f = 10 ma i f = 7 ma i f = 5 ma i f = 2 ma i f = 1 ma i c = f (v ce ) 1.2 1.1 1.0 0.9 0.1 10 100 1 v f (v) i f (ma) icny17_11 v f = f (i f ) 25 c 50 c 75 c 1 0.1 0.01 0.001 0c 25 50 75 100 i ceo (a) ta icny17_12 v ce = 12 v v ce = 35 v i ceo = f (v,t) (i f = 0)
www.vishay.com for technical questions, contact: optocoupleranswe rs@vishay.com document number: 83606 6 rev. 1.7, 04-nov-10 cny17 vishay semiconductors optocoupler, phototransistor output, with base connection fig. 13 - saturation voltage vs. collector current and mo dulation depth cny17-1 fig. 14 - saturation voltage vs. collector current and mo dulation depth cny17-2 fig. 15 - saturation voltage vs. collector current and mo dulation depth cny17-3 fig. 16 - saturation voltage vs. collector current and mo dulation depth cny17-4 fig. 17 - permissible power dissipation for transistor and diode 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 10 100 v ce sat i c (ma) icny17_13 i f = 3 x i c v cesat = f (i c ) 0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 10 100 v ce sat (v) i c (ma) icny17_14 i f = 2 x i c i f = 3 x i c v cesat = f (i c ) 0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1 10 100 v ce sat (v) i c (ma) icny17_15 i f = 2 x i c i f = 3 x i c i f = i c v cesat = f (i c ) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1 10 100 v ce sat (v) i c (ma) icny17_16 i f = 2 x i c i f = 3 x i c i f = i c v cesat = f (i c ) 0 50 100 150 200 0 50 100 75 25 p tot (mw) t a (c) icny17_18 p tot = f (t a ) transistor diode
document number: 83606 for technical questions, contact: optocoupleranswe rs@vishay.com www.vishay.com rev. 1.7, 04-nov-10 7 cny17 optocoupler, photot ransistor output, with base connection vishay semiconductors package dimensions in millimeters i178004 0.25 typ. 2.95 0.5 3.555 0.255 0.8 min. 7.62 typ. 0.85 0.05 2.54 typ. 1 min. 0.5 0.05 6.4 0.1 8.6 0.1 pin one id 6 5 4 1 2 3 18 3 to 9 7.62 to 8.81 4 typ. iso method a 0.5 0.05 8 min. 0.51 1.02 7.62 ref. 9.53 10.03 0.25 typ. 0.102 0.249 15 max. option 9 0.35 0.25 10.16 10.92 7.8 7.4 10.36 9.96 option 6 8 min. 7.62 typ. 4.6 4.1 8.4 min. 10.3 max. 0.7 option 7 18450
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